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Product Detailed Parameters
- Description：JFET N-CH 35V SOT23
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：35 V
- Drain to Source Voltage (Vdss)：35 V
- Current - Drain (Idss) @ Vds (Vgs=0)：5 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：2.5 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：4.5pF @ 15V
- Resistance - RDS(On)：-
- Power - Max：350 mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor CMPF4416A TR is a surface mount N-channel silicon Junction Field Effect Transistor (JFET) housed in an SOT-23 case. Designed for VHF amplifier and mixer applications, it features a maximum drain-source voltage of 35V and a gate-source voltage of 35V. The device dissipates up to 350mW with a thermal resistance of 556°C/W. Key electrical characteristics at 25°C include an IDSS range of 5.0 to 15mA, a VGS(off) range of 2.5 to 6.0V, and a forward transconductance (gFS) between 4.5 and 7.5mS. Input capacitance is 4.5pF, while reverse transfer capacitance is 1.2pF at 1.0MHz.
Feature Summary
- Surface mount construction in an epoxy molded SOT-23 package
- Optimized for VHF amplifier and mixer circuit applications
- N-channel silicon junction field effect transistor technology
Applications
- VHF amplifiers
- Mixer circuits
Procurement Notes
Verify the specific ordering suffix required for plating options when placing orders. The datasheet indicates that adding 'TIN/LEAD' requests tin/lead plated devices, while 'PBFREE' specifies lead-free plating. Confirm current availability and delivery terms directly with authorized distributors or the manufacturer's sales team, as stock levels and lead times fluctuate based on production schedules and regional supply chain conditions.
Selection Notes
Select this component for designs requiring an N-channel JFET in a compact SOT-23 footprint. Ensure the operating environment stays within the -65°C to +150°C junction temperature range. Verify that the circuit biasing aligns with the specified IDSS and VGS(off) ranges to maintain expected gain and noise performance. Consider the 350mW power dissipation limit and thermal resistance when designing heat management strategies for dense PCB layouts.
Part Context
This part belongs to Central Semiconductor’s discrete semiconductor portfolio, which includes various transistors, diodes, and MOSFETs. The company specializes in providing both standard and custom niche semiconductor products. The CMPF4416A represents their surface mount offerings, catering to modern electronics manufacturing needs for smaller form factors compared to through-hole alternatives like the TO-226AA variants.
Replacement Considerations
No official substitute part numbers are listed in the provided documentation. When evaluating cross-compatibility, verify pinout alignment (Drain, Source, Gate) and ensure replacement devices meet or exceed the 35V voltage ratings and 350mW power dissipation limits. Check that the alternative JFET's IDSS and VGS(off) parameters fit the original circuit's biasing requirements.
