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The CMPFJ175 TR is a surface-mount silicon P-channel Junction Field-Effect Transistor (JFET) manufactured by Central Semiconductor Corp. Encased in an SOT-23 package, it is designed for low-level amplifier applications. Key electrical characteristics at 25°C include a Gate-Drain Voltage of 30 V, Power Dissipation of 225 mW, and Drain-Source On-Resistance ranging up to 125 Ω. The device operates within a junction temperature range of -65°C to +150°C.
Verify the specific ordering suffix required for plating configuration when placing orders. Use the "PBFREE" suffix for lead-free plated devices or "TIN/LEAD" for tin/lead options. Confirm availability through authorized distributors as supply status may vary. Ensure the reel packaging matches production line requirements.
Select this component based on its P-channel configuration and SOT-23 footprint suitability for compact designs. Evaluate the maximum power dissipation of 225 mW against thermal constraints. Compare the drain-source on-resistance and gate-source voltage ratings with circuit requirements to ensure proper operation within the specified temperature range.
This part belongs to the CMPFJ175/176/177 family of surface mount silicon P-channel JFETs from Central Semiconductor. These components share similar physical dimensions and general functionality but differ in specific electrical parameters such as IDSS and rDS(ON). The CMPFJ175 is distinguished by its specific marking code "6W".
Direct replacements are not explicitly listed in the provided documentation. Designers should evaluate other P-channel JFETs in the SOT-23 package that meet the 30V breakdown voltage and 225mW power dissipation limits. Verify pinout compatibility and electrical parameter overlaps before substitution.