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Product Detailed Parameters
- Description：JFET P-CH 30V SOT23
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：2 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：1 V @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：250 Ohms
- Power - Max：350 mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23
- Grade：-
- Qualification：-
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Overview
The CMPFJ176 TR is a surface-mount silicon P-Channel Junction Field Effect Transistor (JFET) manufactured by Central Semiconductor Corp. Encased in an SOT-23 package, this component is engineered for low-level amplifier applications. Key electrical characteristics at 25°C include a Gate-Drain Voltage of 30 V, Power Dissipation of 225 mW, and a Drain-Source On-Resistance ranging from 125 to 250 Ω. The device operates within a junction temperature range of -65°C to +150°C.
Feature Summary
- Epoxy molded construction in an SOT-23 case for surface mount integration
- Designed specifically for low level amplifier applications
- P-Channel silicon JFET technology
Applications
- Low level amplifier circuits
- Analog signal processing stages
Procurement Notes
Verify the specific ordering suffix when purchasing. Add TIN/LEAD for tin/lead plating or PBFREE for lead-free plating. Confirm the manufacturer is Central Semiconductor Corp. Ensure the package matches the SOT-23 outline. Check datasheet limits for thermal resistance and voltage ratings before finalizing orders.
Selection Notes
Select the CMPFJ176 based on its P-Channel configuration and SOT-23 footprint. Compare IDSS and rDS(ON) ranges against circuit requirements. Verify that the 225 mW power dissipation and 30 V breakdown voltages meet system constraints. Consider the operating temperature range for environmental suitability.
Part Context
This part belongs to the CMPFJ175, CMPFJ176, and CMPFJ177 family of surface mount silicon P-Channel JFETs. These devices share the same SOT-23 package and general design purpose but differ in specific electrical parameters such as drain current and on-resistance. The CMPFJ176 serves as a middle-ground option within this series.
Replacement Considerations
Direct substitutes are not explicitly listed in the provided documentation. When evaluating alternatives, ensure the replacement matches the P-Channel type, SOT-23 package, and critical electrical limits like VGSS and PD.
