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Product Detailed Parameters
- Description：RF TRANS NPN 15V 600MHZ SOT-23
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：600MHz
- Noise Figure (dB Typ @ f)：6dB @ 60MHz
- Gain：11dB
- Power - Max：350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 3mA, 1V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor CMPT918 is an NPN silicon RF transistor manufactured using the epitaxial planar process and housed in a surface-mount SOT-23 package. Designed for high-frequency VHF/UHF amplifier and oscillator applications, it features a collector-base voltage of 30 V, a collector-emitter voltage of 15 V, and a continuous collector current of 50 mA. The device dissipates up to 350 mW with a thermal resistance of 357 °C/W. Key electrical characteristics include a transition frequency (fT) of 600 MHz at 4.0 mA, a maximum output power of 30 mW at 500 MHz, and a noise figure of 6.0 dB at 60 MHz.
Feature Summary
- Engineered for high-frequency VHF and UHF amplifier and oscillator applications
- Utilizes epitaxial planar process technology for reliable performance
- Optimized for low-noise operation with defined gain and noise figure metrics
Applications
- VHF/UHF amplifier circuits
- High-frequency oscillator designs
- RF signal processing stages
Procurement Notes
Verify the specific ordering suffix when purchasing. The part number includes PBFREE, indicating lead-free plating compliance. If tin/lead plating is required, the suffix must be changed to TIN/LEAD during the ordering process. Confirm availability through authorized distributors as supply status may vary. Ensure the component matches the SOT-23 mechanical outline and C3B marking code upon receipt.
Selection Notes
Select this component for designs requiring an NPN silicon RF transistor with a 600 MHz transition frequency. It is suitable for applications operating within a -65°C to +150°C junction temperature range. Consider the 350 mW power dissipation limit and 357 °C/W thermal resistance for adequate heat management. Verify that the 15 V collector-emitter voltage rating meets the circuit's maximum operating requirements.
Part Context
The CMPT918 belongs to Central Semiconductor’s portfolio of surface-mount RF transistors. It is specifically categorized for high-frequency operations, distinguishing it from general-purpose switching or audio amplification transistors. The device utilizes the SOT-23 case configuration, which is standard for compact surface-mount layouts in modern electronic assemblies.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Designers should consult official cross-reference lists or contact manufacturer support for verified alternatives.
FAQ
What is the transition frequency (fT) of the CMPT918?
The transition frequency is 600 MHz, measured at VCE=10V, IC=4.0mA, and f=100MHz.
How does the ordering suffix affect the plating type?
The PBFREE suffix indicates lead-free plating. To request tin/lead plated devices, the suffix must be changed to TIN/LEAD.
What is the maximum power dissipation for this transistor?
The maximum power dissipation is 350 mW at an ambient temperature of 25°C.
