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Product Detailed Parameters
- Description：RF TRANS NPN 25V 650MHZ SOT-23
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Box
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：25V
- Frequency - Transition：650MHz
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 4mA, 10V
- Current - Collector (Ic) (Max)：-
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23
- Grade：-
- Qualification：-
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Overview
The CMPTH10 BK is an NPN silicon RF transistor manufactured via epitaxial planar process and housed in a surface mount SOT-23 package. Designed for low noise UHF/VHF amplifier and high output oscillator applications, it features a collector-base voltage of 30 V, collector-emitter voltage of 25 V, and emitter-base voltage of 3.0 V. The device dissipates up to 350 mW with a thermal resistance of 357 °C/W. Electrical characteristics include a transition frequency (fT) of 650 MHz at 4.0 mA, minimum DC current gain (hFE) of 60, and collector-base capacitance of 0.70 pF. Operating junction temperature ranges from -65°C to +150°C.
Feature Summary
- Epitaxial planar construction optimized for low noise performance in UHF/VHF amplifier circuits.
- High transition frequency capability suitable for high output oscillator applications.
- Surface mount epoxy molding in SOT-23 case for compact integration.
Applications
- Low noise UHF amplifiers
- VHF amplifiers
- High output oscillators
Procurement Notes
Verify the specific ordering suffix required for plating configuration before purchase. The datasheet indicates that adding "PBFREE" specifies lead-free plated devices, while "TIN/LEAD" requests tin/lead plating. Confirm availability status as the component may be subject to end-of-life management or stock-only distribution policies by the manufacturer.
Selection Notes
Select this component when designing circuits requiring an NPN silicon RF transistor with a 650 MHz transition frequency and low input capacitance. Ensure the application operates within the 25 V collector-emitter voltage limit and 350 mW power dissipation constraints. Verify that the SOT-23 package footprint aligns with the PCB layout requirements for the intended UHF or VHF frequency range.
Part Context
The CMPTH10 BK belongs to Central Semiconductor's lineup of surface mount NPN silicon RF transistors. It utilizes an epitaxial planar process to achieve specific RF performance metrics such as high fT and low noise figures. The part is distinct from general-purpose switching transistors due to its optimization for radio frequency signal processing tasks.
Replacement Considerations
Official documentation lists the CMPTH10 BK as End of Life (EOL) with no direct replacement part number available. Distribution is currently limited to existing stock only. Engineers should consult the manufacturer's engineering team for potential alternate sources or functional equivalents if stock is depleted.
FAQ
What is the maximum operating junction temperature for the CMPTH10?
The maximum operating and storage junction temperature for the CMPTH10 is +150 °C.
How is the CMPTH10 marked on the package?
The marking code for the CMPTH10 is C3E.
What is the typical value for collector-base capacitance (Ccb)?
The collector-base capacitance (Ccb) is typically 0.70 pF, measured at Vcb=10V, Ie=0, and f=1.0MHz.
