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The CMPTH81 TR is a surface mount PNP silicon RF transistor housed in an SOT-23 package. Designed for general RF amplifier applications, it features a collector-base voltage of 20 V and a continuous collector current rating of 50 mA. The device exhibits a transition frequency (fT) of 600 MHz at 100 MHz test conditions. Power dissipation is rated at 225 mW on an FR-4 epoxy PCB substrate. Operating junction temperatures range from -55°C to +150°C.
Verify availability status carefully as the component family has been transitioned to End of Life status by the manufacturer. Current supply is limited to existing stock only with no new production planned. Confirm specific ordering suffixes such as PBFREE or TIN/LEAD directly with Central Semiconductor Corp or authorized distributors before placing orders to ensure compliance with plating requirements.
Select this component for designs requiring a compact PNP RF transistor with a 20 V breakdown voltage. Ensure the application operates within the 225 mW power dissipation limit on appropriate FR-4 substrates. Verify that the 600 MHz transition frequency meets the target circuit bandwidth requirements. Consider the SOT-23 thermal resistance when designing heat management strategies.
Central Semiconductor Corp manufactures the CMPTH81 as a discrete PNP silicon RF transistor. The company specializes in providing various discrete semiconductor components including transistors and diodes. This specific part is designed for surface mount assembly and targets radio frequency amplification tasks within electronic systems.
No direct replacement part numbers are currently available from the manufacturer. The product is classified as End of Life with supply restricted to stock only. Contact [email protected] for assistance in locating alternate sources if necessary.