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Product Detailed Parameters
- Description：140MA 20V SMD MOSFET DUAL P-CHAN
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：140mA
- Rds On (Max) @ Id, Vgs：5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：10pF @ 15V
- Power - Max：125mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-963
- Supplier Device Package：SOT-963
- Grade：-
- Qualification：-
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Overview
The CMRDM7590 TR PBFREE is an enhancement-mode dual P-Channel MOSFET manufactured by Central Semiconductor Corp. It features a maximum drain-source voltage of 20 V and is housed in a compact SOT-363 package. The device is designed for high-speed pulsed amplifier and driver applications, offering efficient switching capabilities within its specified electrical limits.
Feature Summary
- Dual P-Channel configuration for integrated circuit design
- Enhancement mode operation suitable for logic-level control
- Optimized for high-speed pulsed amplifier and driver functions
Applications
- High-speed pulsed amplifiers
- Driver circuits requiring dual channel control
- Low-voltage power management systems
Procurement Notes
Verify the specific ordering suffix to ensure compliance with lead-free requirements and packaging type. Confirm that the requested quantity aligns with the manufacturer's standard reel specifications. Cross-reference the part number with official Central Semiconductor documentation to validate availability and technical parameters before finalizing procurement orders.
Selection Notes
Select this component when a dual P-Channel MOSFET solution is required for low-voltage applications. The 20 V rating defines the operational boundary for source-drain voltage. Consider the SOT-363 package constraints for thermal management and PCB layout space. Ensure the application demands match the enhancement mode characteristics for proper gate drive integration.
Part Context
This component belongs to the Central Semiconductor discrete semiconductor portfolio, specifically within the MOSFET category. It represents a specialized dual-channel device intended for modern electronic designs where space efficiency and switching speed are critical. The product line focuses on providing reliable performance for consumer and industrial electronics.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings if considering alternative manufacturers. Consult official datasheets for direct replacements to ensure functional equivalence.
