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Product Detailed Parameters
- Description：MOSFET N-CH 40V 100A TO-263
- Series：-
- Mfr：Comchip Technology
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：112 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6269 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：156W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The CMS100N04D2-HF is a 40V N-Channel Enhancement Mode Power MOSFET manufactured by Comchip Technology. This component features a DPAK surface-mount package designed for high-efficiency switching applications. Key electrical specifications include a drain-source voltage (V_DSS) of 40V and a continuous drain current (I_D) of 100A at room temperature. The device exhibits a maximum on-resistance (R_DS(on)) of 3.5mΩ, ensuring low conduction losses. It incorporates an integrated body diode with fast recovery characteristics, making it suitable for synchronous rectification and freewheeling duties in power conversion circuits.
Feature Summary
- Enhancement mode operation with high channel conductivity
- Integrated fast-recovery body diode for efficient commutation
- Lead-free finish compliant with RoHS directives
Applications
- DC-DC converter modules
- Synchronous rectification in power supplies
- Motor control circuits
Procurement Notes
Verify the specific suffix 'HF' indicates lead-free compliance when reviewing procurement documentation. Confirm that the ordering part number matches the exact package style and thermal requirements of your design. Ensure that the manufacturer's datasheet is consulted for absolute maximum ratings to prevent device failure during implementation.
Selection Notes
Select this component based on its 40V voltage rating and 100A current capacity relative to system load requirements. Evaluate the thermal performance within the DPAK package against the expected power dissipation. Compare the R_DS(on) value against alternative devices to optimize efficiency in low-voltage, high-current applications.
Part Context
This MOSFET belongs to Comchip's standard N-Channel enhancement mode series. It is engineered for general-purpose power switching where low on-resistance and robust avalanche capability are required. The DPAK package provides a balance between thermal performance and board space efficiency for medium-power designs.
Replacement Considerations
Consult official substitution guides for compatible parts with matching voltage, current, and package specifications. Verify pinout compatibility before replacing existing components in established designs.
