SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The CMS13N06H8-HF is an N-channel enhancement mode MOSFET manufactured by Comchip Technology. It features a maximum drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of 80 A at 25°C. The device exhibits a low on-resistance (RDS(on)) ranging from 5.1 to 9.6 milliohms at VGS=10V. Power dissipation is rated at 86 W, with a maximum operating temperature of +150°C. The component utilizes a surface-mount package suitable for high-current applications.
Verify the specific datasheet revision and marking code (D9D0N06) against official Comchip documentation to ensure authenticity. Confirm package dimensions and pinout compatibility with your PCB footprint before integration. Check for RoHS compliance status as indicated in the manufacturer's latest release notes.
Select this component when a 60V N-channel MOSFET with high current capacity is required. Ensure the gate drive voltage supports the specified RDS(on) conditions. Evaluate thermal management requirements based on the 86W power dissipation rating and ambient operating conditions.
This part belongs to Comchip's CMS series of MOSFETs, designed for general-purpose power switching. It shares family characteristics with other devices like the CMS23N06H8-HF but offers specific current and resistance parameters tailored for distinct load requirements within the same voltage class.
Direct substitutes may include other 60V N-channel MOSFETs with comparable ID and RDS(on) values. Verify pinout compatibility and thermal performance metrics before swapping. Cross-reference with manufacturers like ON Semiconductor or Infineon for equivalent specifications.