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Product Detailed Parameters
- Description：MOSFET P-CH 20V 3A SOT23-3
- Series：CMS
- Mfr：Comchip Technology
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：110mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12 nC @ 2.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：405 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The CMS2301T-HF is a P-Channel MOSFET from Comchip Technology, designed for surface-mount applications in the SOT-23-3 package. It features a drain-source voltage (VDS) of -20 V and a continuous drain current (ID) of -2.3 A to -3 A depending on thermal conditions. The device exhibits a maximum on-resistance (RDS(ON)) ranging from 64 mΩ to 140 mΩ at VGS = ±8 V. Power dissipation is rated at 0.4 W to 1 W. This component serves as a switching element in low-voltage power management circuits.
Feature Summary
- P-Channel enhancement mode MOSFET technology
- Surface-mount SOT-23-3 packaging for compact designs
- Halogen-free construction compliant with environmental standards
Applications
- Low-side switching in battery-powered devices
- Power management circuits for portable electronics
- Load switching in consumer appliances
Procurement Notes
Verify the specific datasheet revision for exact RDS(ON) limits, as values vary between 64 mΩ and 140 mΩ based on test conditions. Confirm package type is SOT-23-3. Check product status as some sources list it as obsolete; ensure availability matches project requirements before finalizing procurement.
Selection Notes
Select this component for applications requiring a -20 V P-Channel switch with moderate current handling up to 3 A. Consider the thermal resistance and power dissipation limits (0.4 W–1 W) when designing heat dissipation strategies. Ensure gate drive voltage supports the specified VGS range for optimal on-resistance performance.
Part Context
This part belongs to Comchip's CMS series of single FETs. It is functionally similar to the CMSP2301T-HF but may differ in specific electrical tolerances or packaging details. It serves as a discrete solution for replacing integrated load switches in cost-sensitive designs where individual component control is preferred.
Replacement Considerations
Publicly confirmed substitutes include CJ2301-HF and CMS2301T-HF variants. Verify pinout compatibility and electrical parameters such as VDS and ID before substitution. Cross-reference with manufacturer documentation to ensure equivalent thermal and switching characteristics.
