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Product Detailed Parameters
- Description：MOSFET P-CH 100V 25A DPAK
- Series：-
- Mfr：Comchip Technology
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：48mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：60 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3848 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 60W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The CMS25N10D-HF is a single P-Channel enhancement mode MOSFET manufactured by Comchip Technology. It utilizes Metal Oxide Semiconductor (MOS) technology and is housed in a surface-mount TO-252 (DPAK) package. The device features a Drain-to-Source Voltage (Vdss) rating of 100 V and supports a continuous drain current of 25 A at case temperature. Thermal performance includes a power dissipation capacity of 2 W at ambient temperature and 60 W at case temperature.
Feature Summary
- P-Channel configuration for high-side switching applications
- Surface-mount DPAK package design for automated assembly
- Metal Oxide Semiconductor construction
Applications
- Power management circuits
- Load switching systems
- DC-DC converter topologies
Procurement Notes
Verify the specific datasheet version to confirm thermal resistance values and gate threshold voltage ranges. Ensure the TO-252 footprint matches the target PCB layout. Confirm RoHS compliance status if required by project specifications. Cross-reference pinout diagrams with existing designs to prevent orientation errors during placement.
Selection Notes
Select this component when a P-Channel solution is required for 100 V applications. Evaluate the 25 A current capability against peak load requirements. Consider the thermal constraints of the DPAK package, as the low ambient power dissipation necessitates adequate copper area or heatsinking for sustained operation.
Part Context
This part belongs to Comchip Technology's discrete transistor portfolio, specifically within the single FET and MOSFET category. It serves as a semiconductor switch alternative to N-Channel devices in specific circuit architectures where P-Channel topology is preferred for control simplicity or level shifting requirements.
Replacement Considerations
Direct substitutes must match the P-Channel type, 100 V rating, and DPAK package. Verify that alternative components meet the 25 A current requirement and compatible gate drive characteristics.
