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Product Detailed Parameters
- Description：MOSFET N-CH 40V 35A 8DFN
- Series：-
- Mfr：Comchip Technology
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1220 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 44W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-PDFN (SPR-PAK ) (3.3x3.3)
- Package / Case：8-PowerWDFN
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Overview
The CMS35N04V8-HF is an N-Channel MOSFET manufactured by Comchip Technology. It features a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of 20V. The device supports a continuous drain current of 35A at case temperature. Power dissipation ratings are specified as 2W at ambient temperature and 44W at case temperature. The component utilizes an 8-PDFN (SPR-PAK) surface mount package with dimensions of 3.3x3.3 mm. It operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Utilizes Metal Oxide Semiconductor technology for efficient switching performance.
- Designed for surface mount assembly in compact electronic circuits.
- Engineered to withstand high thermal stress up to 150°C junction temperature.
Applications
- Power electronics systems
- Inverter circuits
- Motor drive applications
Procurement Notes
Verify the obsolete status of this specific part number before initiating any procurement activities. Confirm availability of alternative sources or substitute components if immediate supply is required. Ensure that the final technical specifications match the design requirements, as datasheets may vary. Check for RoHS compliance documentation to meet environmental standards. Validate the package type and pinout against the target PCB layout to prevent integration errors during assembly.
Selection Notes
Select this component for low-voltage, high-current switching applications requiring a compact footprint. The 40V rating suits battery-powered or low-voltage DC systems. Consider the thermal management capabilities, as power dissipation varies significantly between ambient and case temperatures. The SPR-PAK package offers a balance between current handling and board space efficiency. Evaluate the gate drive requirements relative to the 20V maximum rating.
Part Context
This MOSFET belongs to the single FET category from Comchip Technology. It is designed for general-purpose switching in power management circuits. The 8-PDFN package is common in modern consumer and industrial electronics where space constraints are critical. The device represents a standard solution for low-side switching applications in 12V or 24V systems.
Replacement Considerations
Publicly confirmed substitute part numbers for this specific model were not identified in the provided source material. Verify compatibility with direct replacements by matching VDS, VGS, Rds(on), and package dimensions. Consult manufacturer cross-reference lists for potential alternatives if this obsolete part is no longer available.
