CMS35P03D-HF

$0.26

Description：MOSFET P-CH 30V 8.5A/34A DPAK
Series：-
Mfr：Comchip Technology
Package：Tape & Reel (TR)

SKU:a1d6befe25de Category: Single FETs, MOSFETs Brand: Comchip Technology

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 8.5A/34A DPAK
Series：-
Mfr：Comchip Technology
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：8.5A (Ta), 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：25mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.5 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1345 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 34W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Download product information

CMS35P03D-HF

Overview

The CMS35P03D-HF is a P-channel MOSFET manufactured by Comchip Technology. It features a drain-source voltage (V_DSS) of -30V and a gate-source voltage (V_GSS) of ±20V. The continuous drain current is rated at 8.5A at 25°C ambient temperature and 34A at case temperature. The on-resistance (R_DS(on)) is typically 25mΩ at 15A with a 10V gate drive. The gate threshold voltage (V_GS(th)) is max 2.5V at 250µA, and the total gate charge (Q_g) is max 12.5nC at 4.5V. Input capacitance (C_iss) is max 1345pF.

Feature Summary

Designed for low on-resistance performance to minimize conduction losses in switching applications.
Optimized gate charge characteristics facilitate efficient driving and reduced switching energy consumption.
Robust thermal handling capabilities support high current densities under case temperature conditions.

Applications

Power management circuits requiring efficient P-channel switching
Load switch applications for battery-powered devices
DC-DC converter input protection stages

Procurement Notes

Verify the specific ordering suffix and packaging configuration against the manufacturer's latest datasheet before procurement. Confirm that the component status remains active for new designs. Ensure that the tape and reel specifications match the assembly equipment requirements. Cross-reference the RoHS compliance status with current regulatory standards for the target market.

Selection Notes

Select this component when a -30V P-channel MOSFET with low R_DS(on) is required. Evaluate the 8.5A continuous current rating against the application's thermal dissipation constraints. Consider the 2.5V gate threshold voltage compatibility with standard logic-level drivers. Verify that the package type meets the PCB layout and thermal management needs of the design.

Part Context

This device belongs to Comchip Technology's discrete semiconductor portfolio, specifically within the metal oxide semiconductor field-effect transistor category. It is engineered for general-purpose power switching applications where efficiency and compact form factors are prioritized. The product line emphasizes reliability and consistent electrical performance across operating temperatures.

Replacement Considerations

Direct substitutes must match the -30V V_DSS, P-channel polarity, and TO-220 or similar package footprint. Verify that alternative components offer comparable R_DS(on) at 10V V_GS and similar gate charge values to maintain switching performance. Ensure thermal resistance parameters align with the existing heat sinking strategy.