CMS35P06D-HF

$0.34

Description：MOSFET P-CH 60V 35A DPAK
Series：-
Mfr：Comchip Technology
Package：Tape & Reel (TR)

SKU:61e3640a9521 Category: Single FETs, MOSFETs Brand: Comchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 60V 35A DPAK
Series：-
Mfr：Comchip Technology
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：28mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：43.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2595 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 72.6W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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CMS35P06D-HF

Overview

The CMS35P06D-HF is a P-Channel MOSFET manufactured by Comchip Technology, designed for surface-mount applications. It features a drain-to-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 35 A at case temperature. The device operates within a junction temperature range of -55°C to 150°C. Power dissipation capabilities include 2 W at ambient temperature and 72.6 W at case temperature. The component utilizes Metal Oxide Semiconductor technology and is housed in a TO-252-3 (DPAK) package.

Feature Summary

Utilizes P-Channel Metal Oxide Semiconductor technology for efficient switching operations.
Engineered for surface-mount mounting types to facilitate automated assembly processes.
Rated for high junction temperatures up to 150°C to ensure thermal stability.

Applications

Power management circuits requiring P-Channel switching
Surface-mounted power conversion modules
Thermal-stable electronic assemblies

Procurement Notes

Verify the specific datasheet revision and electrical parameters directly from Comchip Technology before integration. Confirm that the TO-252-3 package dimensions match your PCB footprint requirements. Ensure thermal management strategies account for the specified power dissipation limits at both ambient and case temperatures to maintain reliability within the operating temperature range.

Selection Notes

Select this component when a P-Channel MOSFET with 60 V breakdown and 35 A current capacity is required in a DPAK package. Consider the thermal resistance characteristics if operating near the maximum junction temperature limit. Verify compatibility with gate drive voltages, specifically noting the 20 VGS rating mentioned in available documentation, to ensure proper switching performance.

Part Context

This part belongs to the single FETs and MOSFETs category from Comchip Technology. It is classified as an obsolete product status item in some distributor listings. The device represents a standard discrete power transistor solution for general-purpose switching applications where surface-mount convenience and moderate power handling are prioritized.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official manufacturer cross-reference lists or authorized distributors for verified alternatives compatible with the TO-252-3 package and similar electrical specifications.