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The CMS70N10H8-HF is an N-channel enhancement mode MOSFET manufactured by Comchip Technology. It features a Drain-Source Breakdown Voltage (Vdss) of 100 V and a continuous drain current (Id) of 70 A at case temperature. The device utilizes a DFN5X6 surface-mount package, designed for high-efficiency power switching applications requiring low on-resistance and robust thermal performance.
Verify the specific datasheet revision to confirm exact Rds(on) values and thermal resistance parameters before finalizing designs. Ensure the DFN5X6 footprint matches the PCB layout requirements. Confirm RoHS compliance status if required by project specifications. Cross-reference pinout diagrams with assembly documentation to prevent orientation errors during manufacturing.
Select this component when a 100V voltage rating and 70A current capacity are required in a small form factor. The DFN5X6 package offers improved thermal dissipation compared to traditional TO-220 packages while maintaining a low profile. Consider the gate charge characteristics for switching frequency requirements in high-speed applications.
This part belongs to the CMS70 series of single N-channel MOSFETs from Comchip Technology. The series includes variants with different voltage ratings, such as the CMS70N04H8-HF for 40V applications. These devices are engineered for general-purpose power switching tasks where size and efficiency are critical constraints.
Check for direct substitutes within the same series or comparable packages from other manufacturers. Verify that alternative parts meet or exceed the 100V Vdss and 70A Id specifications. Ensure thermal and electrical characteristics align with the original design requirements.