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Product Detailed Parameters
- Description：MOSFET 2N-CH 22V 6A 4CSP
- Series：-
- Mfr：Comchip Technology
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：22V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta)
- Rds On (Max) @ Id, Vgs：36mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id：1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.4W (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：4-SMD, No Lead
- Supplier Device Package：CSPB1313-4
- Grade：-
- Qualification：-
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Overview
The CMSBN4612-HF is a dual N-channel enhancement mode power MOSFET array manufactured by Comchip Technology. It features a maximum drain-source voltage of 22 V and a continuous forward current of 6 A at ambient temperature. The device operates with a gate-source threshold voltage of 1.3 V and exhibits a gate charge of 7.2 nC. Power dissipation is rated at 1.4 W under thermal conditions, with a maximum operating temperature of +150°C. Packaged in the surface-mount CSPB1313-4 format, it supports SMD/SMT installation.
Feature Summary
- Dual N-channel configuration with common-drain architecture
- Integrated electrostatic discharge protection
- Surface-mount compatible packaging for automated assembly
Applications
- Unidirectional load switching
- Bidirectional load switching
- Power management circuits requiring low-voltage control
Procurement Notes
Verify the specific datasheet version to confirm electrical characteristics match design requirements. Ensure the ordering suffix corresponds to the correct packaging option such as cut tape or reel. Confirm RoHS compliance status prior to procurement. Validate that the package dimensions align with the printed circuit board footprint. Check for any recent manufacturing updates that may affect performance parameters.
Selection Notes
Select this component for applications requiring dual N-channel switching within a 22 V system. The 6 A current rating suits moderate power loads. Consider the 1.4 W power dissipation limit when designing thermal solutions. The common-drain layout facilitates simple control logic. Verify gate threshold voltage compatibility with the driving microcontroller or logic level signals.
Part Context
This part belongs to Comchip Technology's discrete semiconductor product line, specifically within their MOSFET arrays category. The manufacturer specializes in surface-mount discrete semiconductors including diodes and transistors. The company holds quality certifications such as ISO9001 and TS16949. This series targets industrial and consumer electronics markets requiring reliable surface-mount components.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult official distributor databases for cross-reference data. Verify pinout compatibility before substituting with similar dual N-channel MOSFETs. Ensure voltage and current ratings meet or exceed original specifications.
