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Product Detailed Parameters
- Description：MOSFET N-CH 20V 7A SOT23-3
- Series：-
- Mfr：Comchip Technology
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：18mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.1 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：980 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The CMSN3416K-HF is an N-channel enhancement mode MOSFET manufactured by Comchip Technology. It features a Drain-Source Voltage (Vdss) of 20 V and a Continuous Drain Current (Id) of 7 A. The device utilizes a SOT-23 surface-mount package with a maximum power dissipation of 1.3 W. Key electrical characteristics include a maximum RDS(ON) of less than 18 mΩ at VGS=4.5V, less than 22 mΩ at VGS=2.5V, and less than 39 mΩ at VGS=1.8V. The component operates within a temperature range up to +150°C.
Feature Summary
- Low on-resistance performance across multiple gate voltage levels
- High current handling capability in a compact surface-mount package
- Enhancement mode operation for efficient switching control
Applications
- DC-DC converter circuits
- Power management modules
- Battery protection systems
Procurement Notes
Verify the specific datasheet revision and mechanical dimensions against the latest official Comchip Technology documentation before integration. Confirm that the SOT-23-3 package footprint matches the target PCB design. Ensure thermal management strategies account for the 1.3 W power dissipation rating under actual operating conditions. Cross-reference the part number suffix to confirm RoHS compliance status as documented in the manufacturer's certification records.
Selection Notes
Select this component when a low-voltage, high-current N-channel switch is required in space-constrained designs. The low RDS(ON) values at reduced gate voltages make it suitable for logic-level driving applications. Consider the 20 V breakdown voltage limit relative to the system supply rails. Evaluate the thermal resistance of the SOT-23 package against the expected duty cycle and ambient temperature to ensure junction temperatures remain within the specified operational limits.
Part Context
This component belongs to Comchip Technology's discrete semiconductor portfolio, which specializes in surface-mount diodes and transistors. The CMSN series represents their line of MOSFETs designed for general-purpose switching applications. The manufacturer focuses on providing reliable passive and active components for consumer electronics and industrial equipment markets.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official distributor databases or manufacturer cross-reference tools for verified alternatives.
