CMSP2011A6-HF

$0.21

Description：MOSFET P-CH 20V 11A 6DFN
Series：-
Mfr：Comchip Technology
Package：Tape & Reel (TR)

SKU:657bb3011925 Category: Single FETs, MOSFETs Brand: Comchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 11A 6DFN
Series：-
Mfr：Comchip Technology
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：24mOhm @ 7.2A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：35 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：1580 pF @ 6 V
FET Feature：-
Power Dissipation (Max)：750mW (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DFNWB2x2-6L-J
Package / Case：6-WDFN Exposed Pad

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CMSP2011A6-HF

Overview

The CMSP2011A6-HF is a P-channel enhancement mode MOSFET manufactured by Comchip Technology. It features an advanced trench process and is housed in a DFNWB2x2-6L-J surface mount package. The device supports a maximum drain-to-source voltage of 20V and a continuous drain current of 11A at ambient temperature. Power dissipation is rated at 750mW under the same conditions. The component operates within a temperature range extending to +150°C, suitable for compact power management designs requiring high efficiency and low profile integration.

Feature Summary

Advanced trench MOSFET process technology
Low profile surface mount packaging
High current capability with efficient thermal performance

Applications

DC-DC converter circuits
Power management modules
Battery protection systems

Procurement Notes

Verify the specific pinout configuration for the DFNWB2x2-6L-J package against your PCB layout requirements. Confirm that the thermal pad connection aligns with your board's copper pour design to ensure optimal heat dissipation. Check for any specific handling precautions related to the surface mount technology used in this component series.

Selection Notes

Select this component when a compact P-channel solution is required for low-voltage applications. The 20V rating suits logic-level control scenarios. Ensure the 11A current capacity meets peak load demands. Consider the thermal resistance characteristics if operating near maximum temperature limits or in enclosed spaces without adequate airflow.

Part Context

This part belongs to Comchip Technology's discrete semiconductor portfolio, specifically within their MOSFET category. It utilizes a silicon epitaxial planar chip structure typical of modern trench technologies. The manufacturer emphasizes environmental compliance and reliability standards consistent with their broader industrial and consumer electronics component lines.

Replacement Considerations

Consult official substitution guides for compatible P-channel MOSFETs with matching 20V ratings and similar current capabilities. Verify package compatibility before replacing to avoid mechanical fit issues.