CMUT5179 TR TIN/LEAD

Overview

The CMUT5179 TR TIN/LEAD is an NPN silicon RF transistor manufactured by Central Semiconductor using the epitaxial planar process. It is housed in an epoxy molded package and features a maximum power dissipation of 250 mW. The device supports an operating frequency of 1.45 GHz with a minimum DC collector/base gain (hFE) of 25 at 3 mA and 1 V. The maximum collector current is rated at 50 mA.

Feature Summary

• Utilizes epitaxial planar silicon technology for RF applications
• Provides high-frequency operation capability up to 1.45 GHz
• Encapsulated in an epoxy molded surface mount package

Applications

• RF signal amplification circuits
• High-frequency communication systems
• General purpose RF switching applications

Procurement Notes

Verify that the specific ordering suffix matches the required plating specification, as tin/lead variants differ from lead-free options. Confirm the tape and reel packaging quantity aligns with production requirements. Ensure the component designation corresponds to the active status indicated in recent product notices rather than obsolete listings.

Selection Notes

Select this component when designing circuits requiring NPN silicon transistors for radio frequency operations near 1.45 GHz. Consider the 250 mW power dissipation limit and 50 mA collector current rating during thermal and load analysis. Verify compatibility with the intended PCB footprint for the epoxy molded package type.

Part Context

This part belongs to the Central Semiconductor CMUT series of surface mount RF transistors. The manufacturer utilizes the epitaxial planar process for these devices. The CMUT5179 is listed among other similar RF components such as the CMUT7410 within the company's product index.

Replacement Considerations

Public documentation lists the CMPZ4621 TR as a suggested replacement for related items in central semiconductor notices. Verify electrical compatibility before substitution.