ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：JFET N-CH 40V 50MA DIE
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tray
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：40 V
- Drain to Source Voltage (Vdss)：40 V
- Current - Drain (Idss) @ Vds (Vgs=0)：25 mA @ 20 V
- Current Drain (Id) - Max：50 mA
- Voltage - Cutoff (VGS off) @ Id：2 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：20pF @ 20V
- Resistance - RDS(On)：60 Ohms
- Power - Max：350 mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
Download product information
Overview
The CP216-2N4392-CT20 is a silicon N-channel JFET bare die designed for analog switching and chopper applications. It features a gate-drain voltage of 40 V, a drain-source saturation current (IDSS) ranging from 25 to 75 mA, and a gate-source cutoff voltage between 2.0 and 5.0 V. The device operates within a junction temperature range of -65°C to +175°C. Electrical characteristics include an input capacitance of 20 pF at 1 MHz and a turn-on time of 15 ns. The die measures 21 x 16 mils with a thickness of 7.9 mils.
Feature Summary
- Silicon N-channel small signal JFET structure optimized for analog switching
- High breakdown voltage capability suitable for chopper designs
- Low gate leakage current for precision signal handling
- Bare die format allowing custom packaging integration
Applications
- Analog switching circuits
- Chopper amplifier designs
- Commutator applications
- Low-level power supply control
Procurement Notes
This product has been discontinued and transitioned to End of Life status due to wafer process changes. Orders are limited to available inventory on hand. Customers should verify stock availability immediately as no new production is scheduled. Contact sales representatives for final shipment details or alternative sourcing assistance.
Selection Notes
Select this component when integrating discrete JFET functionality into custom packages or hybrid circuits. Verify that the bare die form factor aligns with assembly capabilities. Ensure thermal management supports the specified junction temperature range. Confirm compatibility with existing PCB layout constraints for wire bonding pads.
Part Context
The CP216 series represents a specific wafer process used by Central Semiconductor Corp for JFET manufacturing. This particular part number denotes the 2N4392 device variant packaged in a waffle tray configuration. The CP216 process is being replaced by the CP226V process across the product line.
Replacement Considerations
The official replacement is CP226V-2N4392-CT20. This substitute utilizes the updated CP226V wafer process while maintaining the same electrical specifications and pinout compatibility. Verify mechanical dimensions if redesigning the package assembly.
FAQ
What is the maximum operating junction temperature?
The maximum operating and storage junction temperature is +175°C.
Is this component available for new production?
No, the CP216 wafer process is discontinued. Only existing inventory is available for purchase.
What is the typical gate leakage current?
The gate leakage current (IGSS) is typically less than 0.1 nA at VGS=20V.
