CP226V-2N4393-CT

Description：JFET N-CH 40V 50MA DIE
Series：-

SKU:e2a538e114de Category: JFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：JFET N-CH 40V 50MA DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Tray
FET Type：N-Channel
Voltage - Breakdown (V(BR)GSS)：40 V
Drain to Source Voltage (Vdss)：40 V
Current - Drain (Idss) @ Vds (Vgs=0)：5 mA @ 3 V
Current Drain (Id) - Max：50 mA
Voltage - Cutoff (VGS off) @ Id：500 mV @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds：20pF @ 20V
Resistance - RDS(On)：100 Ohms
Power - Max：1.8 W
Operating Temperature：-65°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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CP226V-2N4393-CT

Overview

The CP226V-2N4393 is a silicon N-channel JFET bare die designed for analog switching and chopper applications. It features a die size of 20 x 17 mils with a thickness of 7.1 mils. The device supports gate-drain and gate-source voltages up to 40 V, with an operating junction temperature range from -65°C to +150°C. Electrical characteristics include a drain-to-source saturation current (IDSS) ranging from 5.0 mA to 30 mA at 20 V, and a gate-to-source cutoff voltage (VGS(OFF)) between 0.5 V and 3.0 V. Input capacitance (Ciss) is typically 20 pF at 1 MHz.

Feature Summary

Silicon N-channel small signal JFET structure optimized for low noise performance
Hermetically sealed equivalent design suitable for high-reliability military applications
Fast switching capabilities with turn-on time of 15 ns and turn-off time of 50 ns
Low input capacitance and high isolation for precision analog circuits

Applications

Analog switching circuits
Chopper stabilization amplifiers
Commutator designs
Low-level power supply control

Procurement Notes

Verify the specific packaging suffix required for your assembly process. Options include unsawn wafers, sawn wafers on plastic rings, or singulated die in waffle packs. Contact Central Semiconductor directly for custom screening, plating options, or special wafer diffusion requirements not listed in standard catalogs.

Selection Notes

Select this component when designing high-speed analog switches requiring low leakage and fast transition times. Ensure the application can accommodate bare die mounting techniques. Verify that the PCB layout supports the specific pad dimensions and thermal management needs associated with direct die attachment methods.

Part Context

This part belongs to the 2N4393 family of N-channel JFETs manufactured by Central Semiconductor Corp. It corresponds to the InterFet 2N4393 specification but is supplied as a bare die rather than in traditional through-hole or surface mount packages. It serves as the foundational semiconductor element for discrete analog switching solutions.

Replacement Considerations

Direct functional equivalents include the InterFet 2N4393, PN4393, and SMP4393 devices. When replacing packaged versions with this bare die, redesign the mechanical interface and bonding process. Verify that the new die's electrical parameters meet the original circuit's tolerance requirements for IDSS and VGS(OFF).

FAQ

What are the physical dimensions of the CP226V-2N4393 die?

The die measures 20 x 17 mils in area with a thickness of 7.1 mils.

Is the CP226V-2N4393 RoHS compliant?

Standard production may vary; customers must request specific plating options such as Tin/Lead or PbFree by adding the appropriate suffix to the part number during ordering.