SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The CP229-2N5109-CT is an NPN RF transistor die manufactured by Central Semiconductor Corp. It is designed for radio frequency applications with a maximum collector current of 0.4 Amps and a breakdown voltage of 20 Volts. The component utilizes silicon technology and is supplied in a tape and reel format, indicated by the CT suffix. This configuration supports automated surface-mount assembly processes for high-volume production environments requiring compact RF switching or amplification stages.
Verify the specific datasheet version corresponding to the 20 Volt rating, as related part numbers in the series may specify different voltage thresholds. Confirm that the tape and reel packaging aligns with your automated placement equipment specifications before finalizing orders. Ensure compatibility with your manufacturing process requirements for bare die or packaged components.
Select this component when designing circuits requiring an NPN silicon RF transistor with a 0.4 Amp current handling capacity and a 20 Volt collector-emitter breakdown voltage. Consider the CP229-2N5109-CM variant if a 30 Volt rating is required instead. Evaluate thermal management needs based on the specific power dissipation limits defined in the official technical documentation.
This part belongs to the CP229 series of NPN RF transistors produced by Central Semiconductor Corp. The series includes variants with different voltage ratings, such as the 30 Volt and 40 Volt versions. These devices are engineered for small-signal radio frequency applications, offering a balance of current handling and voltage tolerance for specialized electronic systems.
Publicly confirmed substitute part numbers are not available in the provided source material. Designers should consult the manufacturer's official documentation for recommended equivalents or cross-reference options.