CP229-2N5109-WN

Overview

The CP229-2N5109-WN is an NPN RF transistor die manufactured by Central Semiconductor Corp. It is designed for radio frequency applications with a collector current rating of 0.4 Ampere and a breakdown voltage of 20 Volts. The component utilizes silicon technology and is supplied as a bare chip or die, intended for integration into custom semiconductor assemblies or hybrid circuits requiring discrete RF switching or amplification capabilities.

Feature Summary

• NPN polarity configuration for RF signal processing
• Silicon-based construction for high-frequency operation
• Bare die format suitable for specialized packaging

Applications

• RF amplifier stages in communication equipment
• High-frequency switching circuits
• Hybrid integrated circuit fabrication

Procurement Notes

Verify the specific suffix 'WN' against official Central Semiconductor documentation to confirm exact binning, metallization, or handling specifications. Ensure that the bare die form factor aligns with your assembly capabilities, as standard retail packaging does not apply to this component type.

Selection Notes

Select this component when a 20V, 0.4A NPN RF die is required for custom RF designs. Confirm compatibility with your substrate and bonding processes. Compare electrical characteristics against alternative RF dies from Central Semiconductor such as the CP229 series variants if different voltage ratings are needed.

Part Context

This part belongs to the CP229 family of small-signal NPN RF transistors produced by Central Semiconductor Corp. These components are typically offered as chips or dies rather than packaged devices, allowing system designers to integrate them directly into advanced packaging solutions for optimized performance.

Replacement Considerations

Direct replacements include other Central Semiconductor CP229 variants such as CP229-2N5109-CM, though voltage ratings may differ (e.g., 30V). Verify pinout and electrical limits before substitution.