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Product Detailed Parameters
- Description：JFET N-CH 35V 5MA SOT23
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tray
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：35 V
- Drain to Source Voltage (Vdss)：35 V
- Current - Drain (Idss) @ Vds (Vgs=0)：5 mA @ 15 V
- Current Drain (Id) - Max：5 mA
- Voltage - Cutoff (VGS off) @ Id：2.5 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：4.5pF @ 15V
- Resistance - RDS(On)：-
- Power - Max：-
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23
- Grade：-
- Qualification：-
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Overview
The CP232V-2N4416A is a silicon N-channel JFET bare die designed for VHF amplifier and mixer applications. It features a gate-drain voltage of 35 V, drain-source saturation current (IDSS) ranging from 5.0 to 15 mA, and gate-source cutoff voltage (VGS(OFF)) between 2.5 and 6.0 V. The device exhibits a forward transconductance (gFS) of 4.5 to 7.5 mS and a noise figure of 2.0 dB at 100 MHz. Operating junction temperature spans -65°C to +150°C. Mechanical specifications include a 14 x 14 mils die size, 7.1 mils thickness, and aluminum-silicon top metalization.
Feature Summary
- Silicon N-channel JFET structure optimized for VHF frequency operations
- Low leakage characteristics with typical gate leakage below 0.1 nA
- Hermetically compatible packaging options including waffle pack trays
Applications
- VHF amplifiers
- Mixers
Procurement Notes
Verify the specific packing configuration required for integration, such as unsawn wafer, sawn wafer on plastic ring, or singulated die in waffle packs. Confirm plating requirements by checking for suffixes like TIN/LEAD or PBFREE if applicable. Ensure design validation covers all field use cases and extreme conditions as per manufacturer disclaimers.
Selection Notes
Select this component when designing sensitive VHF circuits requiring low noise and high breakdown voltage. Consider the bare die form factor for custom packaging solutions. Evaluate thermal management capabilities given the wide operating temperature range up to +150°C. Verify compatibility with existing substrate materials for bonding pad metallization.
Part Context
This part represents a discrete semiconductor die manufactured by Central Semiconductor Corp. It corresponds to the functional characteristics of the 2N4416A family but is supplied without an external package. It serves as a foundational component for hybrid microwave integrated circuits or specialized RF modules where standard packages are unsuitable.
Replacement Considerations
Direct replacements may include other N-channel JFET dies with similar BVGSS and IDSS ranges. Verify pinout compatibility if transitioning to packaged equivalents like the TO-72 or SOT-23 versions of the 2N4416A. Ensure mechanical dimensions and metallization layers match the target assembly process.
