CP307-2N5308-CT

Description：TRANS NPN DARL 40V 0.3A DIE
Series：-

SKU:bcf50c33f7c6 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

CP307-2N5308-CT is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is TRANS NPN DARL 40V 0.3A DIE. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for CP307-2N5308-CT

Description：TRANS NPN DARL 40V 0.3A DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Tray
Transistor Type：NPN - Darlington
Current - Collector (Ic) (Max)：300 mA
Voltage - Collector Emitter Breakdown (Max)：40 V
Vce Saturation (Max) @ Ib, Ic：1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：20000 @ 100mA, 5V
Power - Max：625 mW
Frequency - Transition：60MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for CP307-2N5308-CT

CP307-2N5308-CT

Single Bipolar Transistors Overview

The CP307-2N5308-CT is a bare die NPN silicon Darlington transistor manufactured using the Central Semiconductor CP307 wafer process. The device features an epitaxial planar structure with a die size of 27 x 27 mils and a thickness of 9.0 mils. It utilizes aluminum top-side metalization (30,000Å) and gold back-side metalization (18,000Å). The component is supplied as singulated die in a waffle pack tray configuration.

Single Bipolar Transistors Feature Summary

Epitaxial planar NPN silicon construction
Gold back-side collector metallization
Singulated die format for custom packaging

Single Bipolar Transistors Applications

Custom discrete semiconductor integration
Hybrid microelectronic circuit fabrication
Specialized high-gain switching applications

Single Bipolar Transistors Procurement Notes

Verify current availability status as the CP307 wafer process is classified as End of Life. Confirm that the specific CT suffix denotes singulated die in a waffle pack tray. Ensure compatibility with intended bonding and assembly processes before finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component when integrating bare die into custom packages or hybrid circuits requiring specific form factors. Consider the CP327V process as the designated replacement if new production volume is required. Evaluate thermal and mechanical constraints associated with bare die mounting.

Single Bipolar Transistors Part Context

This part represents a bare die version of the 2N5308 specification, fabricated on the discontinued CP307 wafer process. It provides manufacturers with raw semiconductor elements for custom packaging solutions rather than standard commercial transistor packages.