CP307-MPSA27-WN

Description：TRANS NPN DARL 60V 0.5A DIE
Series：-

SKU:f58e805d0373 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

CP307-MPSA27-WN is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is TRANS NPN DARL 60V 0.5A DIE. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for CP307-MPSA27-WN

Description：TRANS NPN DARL 60V 0.5A DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Bulk
Transistor Type：NPN - Darlington
Current - Collector (Ic) (Max)：500 mA
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max)：500nA
DC Current Gain (hFE) (Min) @ Ic, Vce：10000 @ 100mA, 5V
Power - Max：625 mW
Frequency - Transition：125MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for CP307-MPSA27-WN

CP307-MPSA27-WN

Single Bipolar Transistors Overview

The CP307-MPSA27-WN is a bare NPN silicon Darlington transistor die manufactured using the Central Semiconductor CP307 epitaxial planar process. It features a die size of 27 x 27 mils and a thickness of 9.0 mils, with aluminum top-side metalization and gold back-side collector metallization. The component is supplied as an unsawn full wafer (WN suffix), where every die is electrically tested and rejected units are inked. This specific part number has been officially classified as End of Life.

Single Bipolar Transistors Feature Summary

Utilizes an epitaxial planar process for high-performance NPN Darlington functionality
Features gold back-side metallization to enable direct collector bonding
Supplied as a fully tested unsawn wafer with visual rejection marking on defective dies

Single Bipolar Transistors Applications

Custom monolithic integrated circuit fabrication
High-reliability aerospace and defense hybrid microcircuits
Specialized power switching modules requiring bare die integration

Single Bipolar Transistors Procurement Notes

This component is officially discontinued and classified as End of Life. Procurement is restricted to remaining inventory or last-time buys subject to availability. Verify current stock status directly with the manufacturer or authorized distributors before design finalization. Replacement options exist within the updated CP327V process family.

Single Bipolar Transistors Selection Notes

Select this component only if the specific CP307 epitaxial planar characteristics and physical dimensions meet the design requirements. Engineers must account for the discontinuation status when planning long-term production. Evaluate the CP327V process family as the designated replacement technology for new designs requiring similar electrical performance profiles.

Single Bipolar Transistors Part Context

The CP307 process represents a legacy manufacturing line for small signal transistors at Central Semiconductor Corp. The MPSA27 designation indicates a standard NPN Darlington configuration adapted for bare die applications. The WN suffix specifically denotes the unsawn wafer format, distinguishing it from singulated tray packages like CT or CM.

Single Bipolar Transistors Replacement Considerations

Officially documented replacements include CP327V-MPSA27-CT and CP327V-MPSA27-WN. These parts utilize the newer CP327V wafer process while maintaining the MPSA27 functional specification.

Single Bipolar Transistors FAQ

What does the 'WN' suffix indicate for this part?

The 'WN' suffix indicates that the device is supplied as a full, unsawn wafer. All dies are electrically tested, and any rejected units are marked with ink.