CP373-CMPDM303NH-CT

Description：MOSFET N-CH 30V 3.6A DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Bulk

SKU:ecf9a6f4df76 Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 3.6A DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：78mOhm @ 1.8A, 2.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13 nC @ 4.5 V
Vgs (Max)：12V
Input Capacitance (Ciss) (Max) @ Vds：590 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

Download product information

CP373-CMPDM303NH-CT

Overview

The CP373-CMPDM303NH-CT is a silicon N-channel enhancement-mode MOSFET die designed for high-speed pulsed amplifier and driver applications. It features a 39 x 27 mils die size with a 7.5 mils thickness, housed in singulated tray (waffle) packaging. The device supports a drain-source voltage of 30 V and a continuous steady-state drain current of 3.6 A, with a maximum pulsed current of 14.4 A at 10 μs. Electrical characteristics include a gate-source threshold voltage of 0.6 to 1.2 V, an on-resistance of 0.04 Ω at 4.5 V gate drive, and a total gate charge of 13 nC. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

Engineered as a bare die for integration into custom packages or direct bonding in high-speed pulsed amplifier and driver circuits.
Features low on-resistance and fast switching times, indicated by turn-on and turn-off delays of 15 ns and 29 ns respectively under specified test conditions.
Utilizes aluminum top-side metalization and titanium/nickel/silver back-side metalization for thermal and electrical performance.

Applications

High-speed pulsed amplifier circuits
Driver applications requiring rapid switching

Procurement Notes

Verify the specific ordering suffix required for your procurement needs. The '-CT' suffix denotes singulated die in a waffle pack tray. Confirm if lead-free plating is required by adding 'PBFREE' to the part number, or tin/lead by adding 'TIN/LEAD'. Ensure compatibility with the CP373 wafer process specifications before finalizing orders.

Selection Notes

Select this component when designing custom power stages that require a discrete N-channel MOSFET die rather than a packaged transistor. Consider the 30 V drain-source voltage and 3.6 A continuous current limits against your peak load requirements. Evaluate the thermal management capabilities of your substrate given the 7.5 mils die thickness and metalization layers.

Part Context

This part belongs to the CMPDM series of N-channel MOSFETs manufactured by Central Semiconductor Corp. It represents a bare die version of the commercially available CMPDM303NH packaged transistor. The CP373 prefix identifies the specific wafer fabrication process used for this die.

Replacement Considerations

The CP373 wafer process is discontinued. The official replacement is the CP398X process. Use part number CP398X-CPDM303NH-CT as the direct substitute for this item.