CP375-CWDM3011N-CT

Description：MOSFET N-CH 11A 30V BARE DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Tray

SKU:4118f9b719ac Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 11A 30V BARE DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Tray
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：20mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.3 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：860 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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CP375-CWDM3011N-CT

Overview

The CP375-CWDM3011N-CT is an N-channel enhancement-mode MOSFET die manufactured by Central Semiconductor Corp. It features a 62 x 38 mils die size and 7.5 mils thickness, packaged in singulated waffle trays (suffix CT). The device supports a drain-source voltage of 30V and continuous drain current of 11A at 25°C. Electrical characteristics include a maximum on-resistance of 20 mΩ at VGS=10V/ID=11A, and a total gate charge of 6.3 nC at VDD=15V/VGS=5V.

Feature Summary

Ultra-low profile design with 7.5 mils die thickness for standard die attach wire bond processes
Low on-resistance and low gate charge capabilities
High drain current density

Applications

Load switching
Power management
DC-DC conversion

Procurement Notes

Verify the specific suffix requirements when ordering. The CT suffix indicates singulated die in a tray (waffle) pack. Ensure compatibility with existing wafer process specifications, as the CP375 process is discontinued. Confirm plating options such as PBFREE or TIN/LEAD if required for the assembly process.

Selection Notes

Select this component for applications requiring bare die integration into custom packages. Consider the 30V rating and 11A steady-state current capability. Evaluate thermal management needs given the operating junction temperature range of -55 to +150°C. Verify that the packaging format meets the assembly line requirements for singulated die handling.

Part Context

This part belongs to the CP375 medium power N-channel MOSFET family from Central Semiconductor Corp. The CP375 wafer process has been officially classified as End of Life (EOL). The manufacturer provides replacement options under the CP406 process designation. This transition affects availability and long-term supply chain planning for designs utilizing this specific die.

Replacement Considerations

The official replacement for CP375-CWDM3011N-CT is CP406-CWDM3011N-CT. Review the CP406 datasheet for any mechanical or electrical differences before implementation.