CP375-CWDM3011N-WN

Description：MOSFET N-CH 11A 30V BARE DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Bulk

SKU:1e554233e068 Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 11A 30V BARE DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：20mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.3 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：860 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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CP375-CWDM3011N-WN

Overview

The CP375-CWDM3011N-WN is an N-Channel enhancement-mode MOSFET die manufactured by Central Semiconductor Corp. It features a 62 x 38 mil die size and 7.5 mil thickness, packaged as an unsawn wafer (WN). The device supports a drain-source voltage of 30V and continuous drain current of 11A at 25°C. Electrical characteristics include a maximum on-resistance of 20 mΩ at VGS=10V/ID=11A and 30 mΩ at VGS=4.5V/ID=9.0A. Gate charge is typically 6.3 nC at VDD=15V. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

Ultra-low profile 7.5 mil thick die suitable for standard die attach and wire bond processes
Low on-resistance and low gate charge for efficient power management
High drain current density capability

Applications

Load switching
Power management
DC-DC conversion

Procurement Notes

Verify the specific suffix 'WN' indicates an unsawn wafer configuration with 100% testing and inked reject dies. Confirm plating requirements, such as PBFREE or TIN/LEAD, are explicitly added to the part number during ordering. Check for End-of-Life status updates, as the CP375 process has been discontinued in favor of the CP406 replacement series.

Selection Notes

Select this component when a bare die form factor is required for custom packaging solutions. Ensure the design accommodates the 62 x 38 mil die dimensions and utilizes appropriate wire bonding techniques for the specified gate and source pad areas. Verify that the thermal management strategy supports the 150°C maximum junction temperature rating.

Part Context

This part belongs to the CP375 medium power N-Channel MOSFET family produced by Central Semiconductor Corp. It is designed specifically for integration into custom power modules rather than standalone surface-mount packages. The product line focuses on providing high-performance silicon dies for OEMs requiring tailored power semiconductor solutions.

Replacement Considerations

The CP375 process is classified as End of Life. Official replacements include the CP406-CWDM3011N-WN for the unsawn wafer format. Evaluate the CP406 specifications to ensure compatibility with existing designs before transitioning orders.