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Product Detailed Parameters
- Description：MOSFET N-CH 11A 30V BARE DIE
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tray
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：9.93A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：13mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：1.15W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The CP406-CWDM3011N is a silicon N-Channel enhancement-mode MOSFET bare die designed for high-speed pulsed amplifier and driver applications. It features a drain-source voltage of 30 V, continuous drain current of 9.93 A, and maximum pulsed drain current of 37.44 A. The device operates within a junction temperature range of -55 to +150 °C with a thermal resistance of 65 °C/W. Electrical characteristics include a gate-source threshold voltage of 1.0 to 3.0 V and an on-resistance of 5.66 to 18 mΩ depending on drive conditions.
Feature Summary
- Silicon N-Channel enhancement-mode construction optimized for high-speed pulsed operations
- Robust electrical ratings supporting up to 37.44 A pulsed drain current
- Wide operating temperature range from -55 °C to +150 °C
- Low on-resistance performance suitable for efficient power switching
Applications
- High-speed pulsed amplifiers
- Driver circuits requiring fast switching capabilities
- Power management systems utilizing bare die integration
Procurement Notes
Verify the specific packaging suffix required for your assembly process, such as CT for singulated waffle pack or WN for unsawn wafer. Confirm plating options like PBFREE if lead-free compliance is mandatory. Ensure design compatibility with the bare die form factor, including wire bonding pad dimensions and thermal management strategies for the exposed backside metalization.
Selection Notes
Select this component when integrating discrete MOSFET functionality directly into custom packages or hybrid circuits. Consider the 63.8 x 38.9 mils die size and 5.5 mils thickness for mechanical fit. Evaluate the 65 °C/W thermal resistance against your system's heat dissipation requirements. Verify that the 30 V breakdown voltage aligns with your circuit's maximum operating stresses.
Part Context
This part is a bare semiconductor die manufactured by Central Semiconductor Corp. It belongs to the CWDM series of N-Channel MOSFETs. Unlike packaged transistors, this component requires custom mounting and wire bonding during final assembly. It serves as a fundamental building block for specialized power electronics where standard package footprints are unsuitable.
Replacement Considerations
Direct replacements must match the 30 V, ~10 A N-Channel MOSFET specifications and similar die dimensions. Verify that alternative dies support the same wire bonding pad configurations and thermal interface requirements. Consult manufacturer documentation to ensure equivalent electrical parameters and reliability standards.
