CP616-2N5160-CM

Overview

The CP616-2N5160-CM is a PNP silicon power transistor manufactured by Central Semiconductor Corp. Designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment, it functions as a Class A, B, or C output driver or pre-driver stage in VHF and UHF circuits. The device features a collector-emitter voltage (Vceo) of 40V, a collector-base voltage (Vcbo) of 60V, and an emitter-base voltage (Vebo) of 4.0V. It supports a maximum DC collector current of 1A with a power dissipation rating of 1W. Key electrical characteristics include a transition frequency of 3MHz and a maximum collector cutoff current of 300µA.

Feature Summary

• Engineered for high-frequency VHF and UHF amplifier and oscillator applications
• Capable of operation as Class A, B, or C output driver stages
• Constructed from silicon material for robust performance

Applications

• Military and industrial amplifier circuits
• Frequency multiplier stages
• Oscillator circuits
• VHF and UHF pre-driver stages

Procurement Notes

Verify the specific manufacturer datasheet to confirm exact pinout configurations and absolute maximum ratings before integration. Ensure that the sourcing channel provides authentic components matching the CP616-2N5160-CM designation. Cross-reference technical specifications against the original design requirements to guarantee compatibility with the intended circuit topology.

Selection Notes

Select this component when designing VHF or UHF systems requiring a PNP silicon power transistor. Consider its 40V collector-emitter breakdown voltage and 1A current capacity relative to load requirements. Evaluate the 3MHz transition frequency to ensure suitability for the target operating bandwidth and signal processing needs.

Part Context

This part number represents a variant of the standard 2N5160 PNP silicon power transistor produced by Central Semiconductor Corp. It belongs to the family of discrete bipolar junction transistors designed for general-purpose amplification and switching in radio frequency environments. The designation indicates specific manufacturing standards associated with the supplier's product line.

Replacement Considerations

Compatible substitutes include other PNP silicon power transistors with similar Vceo, Ic, and package specifications. Verify electrical parameters such as transition frequency and power dissipation to ensure functional equivalence in VHF/UHF applications.