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Product Detailed Parameters
- Description：RF TRANS PNP 20V 600MHZ DIE
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tray
- Transistor Type：PNP
- Voltage - Collector Emitter Breakdown (Max)：20V
- Frequency - Transition：600MHz
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 5mA, 10V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The CP681-MPSH81-CM is a silicon PNP RF transistor die designed for general-purpose RF amplifier and mixer applications. It features a 15 x 15 mil die size with a thickness of 7.9 mils. Maximum ratings include a collector-base voltage (V_CBO) of 20 V, collector-emitter voltage (V_CEO) of 20 V, and emitter-base voltage (V_EBO) of 3.0 V. The continuous collector current is rated at 50 mA, with an operating junction temperature range from -55 to +150 °C. Electrical characteristics specify a transition frequency (f_T) of 600 MHz at 100 MHz test frequency, h_FE of 60, and collector-base capacitance (C_cb) of 0.85 pF.
Feature Summary
- Silicon PNP RF transistor die optimized for amplifier and mixer circuits
- High transition frequency capability for RF signal processing
- Robust thermal performance with extended operating temperature range
- Low leakage currents and defined saturation voltages
Applications
- General purpose RF amplifiers
- RF mixer circuits
- High-frequency signal processing modules
Procurement Notes
This component is classified as End of Life (EOL). No new production is available; only existing stock may be obtained. Last purchase orders must be placed within six months of the notice date, with final shipments occurring within twelve months. Minimum order quantities may apply. Contact [email protected] for technical data or alternate source assistance if stock is unavailable.
Selection Notes
Select this bare die for custom RF designs requiring a PNP transistor with 20 V voltage ratings and 50 mA current handling. Verify compatibility with bonding pad dimensions (2.3 mil diameter) and metalization specifications (Al-Si top, Au back). Ensure packaging requirements match the CM suffix for singulated die in waffle pack trays inspected per MIL-STD-750.
Part Context
The CP681 is part of Central Semiconductor Corp's discrete semiconductor product line, specifically categorized under silicon RF transistors. This model represents a bare die configuration rather than a packaged component, intended for integration into custom hybrid circuits or MMICs. The MPSH81 designation indicates its functional equivalence to other industry-standard PNP RF dies.
Replacement Considerations
No direct replacement part numbers are listed by the manufacturer. The datasheet notes that replacements are N/A and available only from stock. Customers are advised to contact engineering support for potential alternate sources since no official substitute is provided.
