CP775-CWDM3011P-CM

Description：MOSFET P-CH 30V 11A DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Tray

SKU:cf6eefd7827e Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 11A DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Tray
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：20mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3100 pF @ 8 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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CP775-CWDM3011P-CM

Overview

The CP775-CWDM3011P-CM is a P-Channel Enhancement-Mode MOSFET die manufactured by Central Semiconductor Corp. It features a 90 x 60 mil die size and 5.5 mil thickness, packaged in singulated waffle trays (CM suffix). Key electrical parameters include a Drain-Source Voltage of 30V, Gate-Source Voltage of 20V, and Continuous Drain Current of 11A. The device exhibits an on-resistance of 20mΩ at VGS=10V/ID=11A and a total gate charge of 80nC.

Feature Summary

Ultra-low profile design with 5.5 mil die thickness for standard die attach wire bond processes
Optimized for high drain current density and low on-resistance performance
Low gate charge characteristics to support efficient switching applications

Applications

Load switching
Power management
DC-DC conversion

Procurement Notes

Verify the specific wafer process revision required for your application. The CP775 process is officially classified as End of Life. Confirm availability of the designated replacement CP802 process or existing inventory before finalizing procurement plans. Contact [email protected] for technical data regarding alternate sources if necessary.

Selection Notes

Select this component when a bare die form factor is required for custom packaging solutions. Ensure the design accommodates the 90 x 60 mil die dimensions and utilizes appropriate wire bonding techniques. Verify that the 30V rating and 11A continuous current capability align with the system's power requirements and thermal constraints.

Part Context

This part belongs to the CWDM series of medium power MOSFET dies from Central Semiconductor. It is designed for integration into custom power modules where space and thermal efficiency are critical. The CM suffix indicates it is supplied in singulated waffle pack trays for automated assembly handling.

Replacement Considerations

The CP775-CWDM3011P-CM has been transitioned to End of Life status. The official replacement part number is CP802-CWDM3011P-CM. Designers should evaluate the CP802 process specifications to ensure compatibility with existing designs.