CP775-CWDM3011P-CT

Description：MOSFET P-CH 30V 11A DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Tray

SKU:5d42423c63d5 Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 11A DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Tray
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：20mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3100 pF @ 8 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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CP775-CWDM3011P-CT

Overview

The CP775-CWDM3011P is a bare die P-Channel MOSFET manufactured by Central Semiconductor Corp. It features a 90 x 60 mil die size and a 5.5 mil thickness, designed for ultra-low profile integration via standard wire bonding. The device supports a drain-source voltage of 30V and a continuous drain current of 11A. Electrical characteristics include a maximum on-resistance of 20 mΩ at VGS=10V and ID=11A, with a gate threshold voltage ranging from 1.0V to 3.0V. Operating junction temperature spans -55°C to +150°C.

Feature Summary

Ultra-low profile design enabled by a 5.5 mil die thickness suitable for space-constrained applications
High drain current density capability supporting up to 11A steady-state operation
Low on-resistance and low gate charge optimized for efficient power management

Applications

Load switching
Power management
DC-DC conversion

Procurement Notes

Verify the specific ordering suffix required for your packaging needs, such as CT for singulated die in waffle pack or WN for unsawn wafer. Confirm plating options like PBFREE if applicable. Note that the CP775 process is classified as End of Life; ensure procurement aligns with last-time buy windows or transition to the designated replacement series.

Selection Notes

Select this component when an ultra-thin form factor is critical for board space optimization. Ensure the application requires a P-Channel enhancement-mode device capable of handling 30V and 11A. Verify compatibility with standard die attach and wire bond processes. Consider the EOL status and evaluate the CP802 series if long-term supply continuity is a primary constraint.

Part Context

This part belongs to the CP775 wafer process family, which is currently discontinued. It serves as a medium-power discrete semiconductor component intended for custom assembly into various packages or direct integration into hybrid circuits. The product line focuses on providing high-performance silicon solutions for specialized power electronics designs.

Replacement Considerations

The CP775-CWDM3011P is replaced by the CP802-CWDM3011P series. Matching the specific suffix (e.g., -CT, -CM, -WN) is essential for identical packaging configuration. Review the CP802 datasheet for any updated mechanical or electrical tolerances before finalizing the substitution.