CP802-CWDM3011P-CM

Description：MOSFET P-CH 30V 11A DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Tray

SKU:9efda4749c6f Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 11A DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Tray
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：13mOhm @ 1A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3100 pF @ 8 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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CP802-CWDM3011P-CM

Overview

The CP802-CWDM3011P is a bare die P-Channel MOSFET designed for power management and load switching applications. It features an enhancement-mode structure with a 5.5 mil thickness, suitable for standard die attach and wire bond processes. The device supports a drain-source voltage of 30V and a continuous drain current of 11A at 25°C. Key electrical characteristics include a maximum on-resistance of 16mΩ at VGS=4.5V and a total gate charge of 80nC. Operating junction temperatures range from -55°C to +150°C.

Feature Summary

Ultra-low profile 5.5 mil thick die design
Low on-resistance and low gate charge
High drain current density capability

Applications

Load switching
Power management
DC-DC conversion

Procurement Notes

Verify the specific packaging suffix required for your assembly process. Options include unsawn wafers (WN), sawn wafers on plastic rings (WR), singulated die in trays (CT), or visually inspected singulated die (CM). Contact Central Semiconductor sales representatives directly for special orders such as metal frame mounting or custom plating requirements.

Selection Notes

Select this component when a bare die solution is required for high-density power designs. Ensure compatibility with standard die attach and wire bonding equipment due to the specified mechanical dimensions. Verify that the driving circuit can provide sufficient gate voltage to achieve the desired low on-resistance levels under expected load conditions.

Part Context

This part belongs to the CWDM series of medium power MOSFETs manufactured by Central Semiconductor Corp. It is provided as a semiconductor die rather than a packaged component, intended for integration into custom modules or hybrid circuits where space constraints and thermal performance are critical design factors.