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Product Detailed Parameters
- Description：MOSFET N-CH 250V 360MA SOT89-3
- Series：-
- Mfr：IXYS Integrated Circuits Division
- Package：Tube
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：360mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：0V
- Rds On (Max) @ Id, Vgs：4Ohm @ 200mA, 0V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：350 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：-55°C ~ 125°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-89-3
- Package / Case：TO-243AA
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Overview
The CPC3703C is an N-channel depletion-mode vertical DMOS FET manufactured by IXYS Integrated Circuits Division. It features a maximum drain-to-source voltage of 250V and a continuous drain current of 360mA at 25°C. The device exhibits a maximum on-state resistance of 4.0Ω at VGS=0V and ID=200mA, with a gate-to-source off voltage ranging from -1.6V to -3.9V. Thermal characteristics include a total package dissipation of 1.6W and an operating temperature range of -55°C to +125°C. Input capacitance is specified at 350pF.
Feature Summary
- N-channel depletion mode operation utilizing third-generation vertical DMOS process
- High breakdown voltage capability up to 250V
- Low on-state resistance at cold temperatures
- High input impedance structure
Applications
- Ignition modules
- Normally-on switches
- Solid state relays
- Converters
- Telecommunications
Procurement Notes
Verify the specific ordering suffix for packaging requirements, as the CPC3703C designation typically corresponds to tube packaging while CTR variants indicate reel formats. Confirm RoHS compliance status and manufacturer documentation version prior to procurement. Ensure thermal management aligns with the 1.6W power dissipation rating in the SOT-89 package.
Selection Notes
Select this component for applications requiring normally-on behavior without gate drive voltage. The low RDS(ON) characteristic makes it suitable for high-power environments where performance at lower temperatures is critical. Verify that the 250V breakdown voltage meets system requirements and that the 360mA continuous current rating supports the load.
Part Context
The CPC3703C belongs to the Clare series of N-channel depletion-mode MOSFETs produced by IXYS. These devices are designed for robust high-voltage switching applications. The part utilizes a proprietary vertical DMOS process to achieve high performance within an economical silicon gate structure, widely used in industrial and telecommunications solid-state relay designs.
Replacement Considerations
Direct substitutes include CPC3703CTR (Reel variant). Cross-reference CPC3703C from other manufacturers such as Littelfuse or CLARE for equivalent specifications.
