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The CPC3720C is an N-channel depletion-mode field-effect transistor manufactured by IXYS Integrated Circuits Division. It utilizes a proprietary third-generation vertical DMOS process to deliver high-voltage performance in a compact SOT-89 package. The device features a maximum drain-to-source breakdown voltage of 350V and a maximum on-state resistance of 22 ohms at 25°C. It operates within a temperature range of -55°C to +125°C.
Verify the specific ordering suffix when purchasing. The 'C' suffix indicates cut-tape packaging available in quantities of 200, 400, 600, or 800 units. Orders containing 1000 units or more must utilize the 'CTR' suffix for tape and reel packaging in increments of 1000. Confirm package type requirements before finalizing orders.
Select this component for circuits requiring normally-on behavior with high voltage blocking capabilities. The device is particularly suited for industrial and telecommunications applications where reliability under varying thermal conditions is critical. Ensure gate drive voltages remain within the specified limits to maintain optimal switching performance.
This part belongs to the CPC3720 series of N-channel depletion-mode FETs. It is designed as a replacement for legacy discrete components in solid state relay designs. The device integrates high-voltage MOSFET technology into a standard surface-mount footprint for ease of integration.
CPC3720CTR
The gate-to-source off voltage (VGS(off)) ranges from -1.6V to -3.9V.
The on-resistance increases by approximately 1.1% per degree Celsius rise in temperature.