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The onsemi CPH3350-TL-W is a single-channel P-Channel enhancement mode MOSFET designed for surface-mount applications. It features a 20 V drain-source breakdown voltage and supports a continuous drain current of 3 A. The device exhibits a maximum on-resistance of 83 mΩ at specified gate drive conditions. It operates within a temperature range of -55 °C to +150 °C with a power dissipation rating of 1 W. Packaged in an SOT-23-3 outline, it utilizes silicon technology and includes a gate threshold voltage of 1.3 V and a gate charge of 4.6 nC.
Verify component authenticity through authorized distribution channels due to the discontinued lifecycle status. Confirm RoHS compliance details via official datasheets before integration. Ensure storage conditions align with manufacturer specifications to maintain reliability. Validate package markings against official documentation to prevent counterfeit substitution during procurement.
Select this component for designs requiring a compact P-Channel solution with 20 V capability. The SOT-23-3 package suits space-constrained layouts. Evaluate thermal performance against the 1 W dissipation limit. Compare on-resistance characteristics with alternative devices if lower conduction losses are required for specific load currents.
This part belongs to the CPH3350 series from onsemi, focusing on low-voltage power switching. It complements other components in the company's discrete transistor portfolio. The series targets consumer electronics and industrial applications needing efficient power control in small form factors.
Consult official cross-reference lists for verified substitutes. Verify pinout compatibility and electrical parameters match before substitution.