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Product Detailed Parameters
- Description：MOSFET P-CH 60V 1.8A 3CPH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：250mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id：2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：262 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-CPH
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The CPH3351-TL-W is a single-channel P-Channel enhancement mode MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in an SC-59 (SOT-23) surface-mount package with three pins. Key electrical parameters include a drain-source breakdown voltage of 60 V, a continuous drain current of 1.8 A, and a maximum on-resistance of 350 mΩ. The device supports a gate-source voltage range of ±20 V, has a typical gate charge of 6 nC at 10 V, and operates within a temperature range of -55°C to +150°C with a power dissipation rating of 1 W.
Feature Summary
- P-Channel enhancement mode configuration for high-side switching applications
- Low on-resistance design optimized for efficient power management
- Robust thermal performance supporting operation up to 150°C junction temperature
Applications
- High-side load switches in portable electronic devices
- Power distribution circuits in automotive systems
- Battery protection modules requiring low quiescent current
Procurement Notes
Verify component authenticity through authorized onsemi distributors or direct manufacturer channels. Confirm RoHS and REACH compliance status prior to integration. Ensure storage conditions adhere to moisture sensitivity levels specified in the datasheet. Validate pinout alignment with SC-59 footprint requirements during PCB layout. Check for obsolescence notices as availability may vary across regions.
Selection Notes
Select this component when a P-Channel MOSFET with 60 V rating and 1.8 A current capacity is required in a compact SMD package. Compare on-resistance values against system efficiency targets. Consider gate charge characteristics for switching speed requirements. Verify thermal resistance parameters for heat dissipation needs in enclosed environments.
Part Context
This part belongs to onsemi's discrete MOSFET portfolio, designed for general-purpose power switching. The SC-59 package offers space-efficient mounting for consumer and industrial electronics. It complements N-Channel variants in complementary bridge configurations. The series emphasizes reliability and consistent performance across automotive and industrial temperature ranges.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure replacement parts match voltage, current, and package specifications. Verify compatibility with existing gate drive circuitry and thermal management solutions.
