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The CPH3355-TL-H is a P-Channel enhancement mode MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 2.5 A. Key electrical characteristics include a maximum on-resistance of 156 mΩ, a gate-source voltage range of ±20 V, and a threshold voltage of 4 V. The component operates within a temperature range of -55 °C to +150 °C with a power dissipation rating of 1 W.
Verify the specific suffix against official documentation, as the TL-W variant is documented while the TL-H status requires confirmation. Confirm RoHS compliance and REACH SVHC details via the manufacturer's datasheet. Ensure the component meets required automotive or industrial reliability standards if applicable to the design.
Select this component for low-voltage P-Channel switching requirements where a 30 V rating and 2.5 A current capacity are sufficient. Consider the SOT-23-3 footprint for space-constrained designs. Verify that the 4 V threshold voltage aligns with the logic level control signals available in the target system architecture.
This part belongs to the CPH3355 series of single-channel MOSFETs from onsemi. The series includes variants such as CPH3355-TL-W. These devices are designed for general-purpose switching tasks in consumer and industrial electronics, offering a balance of performance and compact packaging.
Cross-reference with other P-Channel MOSFETs in the SOT-23-3 package. Verify pinout compatibility and ensure equivalent or superior electrical ratings for Vds, Id, and Rds(on) before substitution.