CPH3355-TL-H

CPH3355-TL-H

$0.12
  • Description:CPH3355 - SINGLE P-CHANNEL POWER
  • Series:-
  • Mfr:onsemi
  • Package:Bulk

SKU:c24dd88a23c3 Category: Brand:

  
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Product Detailed Parameters

  • Description:CPH3355 - SINGLE P-CHANNEL POWER
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:156mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id:2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:3.9 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:172 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):1W (Ta)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:3-CPH
  • Package / Case:TO-236-3, SC-59, SOT-23-3

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CPH3355-TL-H

Overview

The CPH3355-TL-H is a P-Channel enhancement mode MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 2.5 A. Key electrical characteristics include a maximum on-resistance of 156 mΩ, a gate-source voltage range of ±20 V, and a threshold voltage of 4 V. The component operates within a temperature range of -55 °C to +150 °C with a power dissipation rating of 1 W.

Feature Summary

  • P-Channel configuration for high-side switching applications
  • Low on-resistance for efficient power management
  • Enhanced thermal stability up to 150 °C

Applications

  • Power management circuits
  • Load switching applications
  • Battery protection systems

Procurement Notes

Verify the specific suffix against official documentation, as the TL-W variant is documented while the TL-H status requires confirmation. Confirm RoHS compliance and REACH SVHC details via the manufacturer's datasheet. Ensure the component meets required automotive or industrial reliability standards if applicable to the design.

Selection Notes

Select this component for low-voltage P-Channel switching requirements where a 30 V rating and 2.5 A current capacity are sufficient. Consider the SOT-23-3 footprint for space-constrained designs. Verify that the 4 V threshold voltage aligns with the logic level control signals available in the target system architecture.

Part Context

This part belongs to the CPH3355 series of single-channel MOSFETs from onsemi. The series includes variants such as CPH3355-TL-W. These devices are designed for general-purpose switching tasks in consumer and industrial electronics, offering a balance of performance and compact packaging.

Replacement Considerations

Cross-reference with other P-Channel MOSFETs in the SOT-23-3 package. Verify pinout compatibility and ensure equivalent or superior electrical ratings for Vds, Id, and Rds(on) before substitution.

CPH3355-TL-HCPH3355-TL-H
$0.12
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