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Product Detailed Parameters
- Description：MOSFET P-CH 20V 2.5A 3CPH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：137mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：3.3 nC @ 4.5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：250 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-CPH
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The CPH3356-TL-H is a single N-channel enhancement mode MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in a surface-mount SOT-23-3 package. The device features a drain-source breakdown voltage of 20 V and supports a continuous drain current of 3.5 A. Key electrical characteristics include a maximum on-resistance of 156 mΩ, a gate threshold voltage of 1.3 V, and a power dissipation rating of 1 W. The component operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- N-channel enhancement mode configuration for standard switching applications
- Low on-resistance design for efficient power handling
- Surface-mount construction for automated assembly
Applications
- General purpose low-side switching
- Power management circuits
- Load control systems
Procurement Notes
Verify the specific suffix TL-H against the manufacturer's official datasheet to confirm pinout and electrical tolerances. Confirm RoHS compliance status through the supplier's documentation. Ensure the sourcing channel provides valid traceability records for this discontinued or legacy part number before finalizing acquisition.
Selection Notes
Select this component when a 20 V N-channel MOSFET with a 3.5 A current rating is required in a compact SOT-23-3 footprint. Evaluate the 156 mΩ on-resistance against thermal constraints. Compare the 1.3 V threshold voltage with the driving logic levels to ensure reliable turn-on performance in the target circuit design.
Part Context
This device belongs to the CPH series of small-signal MOSFETs from onsemi. These components are designed for general-purpose switching tasks where space efficiency is critical. The CPH3356 variant specifically targets applications requiring moderate current capacity within a minimal three-terminal surface-mount package.
Replacement Considerations
Consult the official onsemi cross-reference guide for verified substitutes. Verify that any alternative part matches the 20 V rating, 3.5 A current capability, and SOT-23-3 package dimensions.
