CPH3360-TL-W

$0.37

Description：MOSFET P-CH 30V 1.6A 3CPH
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:357c5412eb98 Category: Single FETs, MOSFETs Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 1.6A 3CPH
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：303mOhm @ 800mA, 10V
Vgs(th) (Max) @ Id：2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：2.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：82 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：3-CPH
Package / Case：TO-236-3, SC-59, SOT-23-3

Download product information

CPH3360-TL-W

Overview

The CPH3360-TL-W is a single P-Channel Power MOSFET manufactured by onsemi using trench technology. It features a drain-to-source voltage of -30 V and a continuous drain current of -1.6 A. The device exhibits a maximum on-resistance of 303 mΩ at VGS = -10 V and 617 mΩ at VGS = -4 V. Total gate charge is typically 2.2 nC. It operates within a junction temperature range of -55 °C to +150 °C and is housed in an SC-59 (SOT-23) package.

Feature Summary

Utilizes trench technology to minimize gate charge and on-resistance
Optimized for low gate charge driving applications
Designed for high-speed switching performance

Applications

DC/DC Converter circuits

Procurement Notes

Verify the specific ordering suffix against official documentation, as variations exist between tape-and-reel and cut-tape formats. Confirm RoHS compliance status through the manufacturer's latest datasheet revision. Ensure handling precautions are observed due to specified ESD immunity characteristics below 200V under machine model testing conditions.

Selection Notes

Select this component when designing circuits requiring a -30 V P-Channel MOSFET with low gate charge capabilities. The device supports both -10 V and -4 V logic-level drive voltages, offering flexibility in gate driver selection. Verify thermal resistance requirements against the application's power dissipation needs, noting the 0.9 W rating on a ceramic substrate.

Part Context

This device belongs to the CPH3360 series of power MOSFETs produced by onsemi. The product line utilizes trench technology specifically engineered to reduce gate charge and on-resistance. The CPH3360 variant provides a -30 V breakdown voltage suitable for general-purpose switching applications.