CPH3403-TL-E

$0.14

Description：N-CHANNEL MOS SILICON FET
Series：*
Mfr：Sanyo
Package：Bulk

SKU:1a7479a465b5 Category: Single FETs, MOSFETs Brand: Sanyo

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Product introduction

Product Detailed Parameters

Description：N-CHANNEL MOS SILICON FET
Series：*
Mfr：Sanyo
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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CPH3403-TL-E

Overview

The CPH3403-TL-E is a small signal N-channel MOSFET manufactured by Sanyo. It features an ultrasmall SC-59 (TO-236) surface-mount package with three terminals. The device is designed for high-speed switching applications, offering a maximum drain current of 5 A and a drain-source breakdown voltage of 20 V. It utilizes metal-oxide semiconductor technology in a plastic epoxy rectangular encapsulation.

Feature Summary

Ultrasmall package facilitates miniaturization in end products
High-speed switching capability
Large current capacity

Applications

Ultrahigh-speed switching applications

Procurement Notes

Verify the manufacturer designation, as Sanyo's semiconductor operations were acquired by ON Semiconductor. Confirm the specific datasheet version and absolute maximum ratings to ensure compatibility with the intended circuit design requirements.

Selection Notes

Select this component for space-constrained designs requiring fast switching speeds. Ensure the operating voltage remains within the 20 V limit and that thermal management supports the specified power dissipation capabilities for continuous operation.

Part Context

This part belongs to the CPH series of epitaxial planar silicon transistors from Sanyo. The series includes complementary PNP/NPN bipolar transistors and MOSFET variants, all characterized by adoption of advanced MBIT or FBET processes for improved performance and density.