CPH3455-TL-W

$0.13

Description：MOSFET N-CH 35V 3A 3CPH
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Bulk

SKU:ee2b15aa9159 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 35V 3A 3CPH
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：35 V
Current - Continuous Drain (Id) @ 25°C：3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：104mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id：2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：186 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：3-CPH
Package / Case：TO-236-3, SC-59, SOT-23-3

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CPH3455-TL-W

Overview

The onsemi CPH3455-TL-W is a single N-channel power MOSFET utilizing trench technology to achieve low gate charge and low on-resistance. It features a maximum drain-to-source voltage of 35 V and a continuous drain current of 3 A. The device offers a static drain-to-source on-state resistance of 104 mΩ at VGS = 10 V, 173 mΩ at VGS = 4.5 V, and 208 mΩ at VGS = 4 V. Total gate charge is 4 nC at VGS = 10 V. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 1 W when mounted on a ceramic substrate.

Feature Summary

Trench technology designed for minimized gate charge and low on-resistance
Capable of operation with low gate charge driving or low on-resistance requirements
Compliant with Pb-Free, Halogen Free, and RoHS standards

Applications

Load Switch
Motor Drive

Procurement Notes

Verify the specific ordering suffix (TL-H) against the manufacturer's official documentation to confirm shipping format and package details. Ensure that the component meets all applicable environmental compliance requirements such as RoHS and Halogen-free status before procurement. Cross-reference the datasheet revision date to ensure the latest electrical characteristics are utilized for design validation.

Selection Notes

Select this component for applications requiring efficient switching with minimal drive power due to its low total gate charge. The device is suitable for circuits demanding low conduction losses, indicated by its optimized on-resistance across various gate voltages. Verify that the required operating voltage does not exceed the 35 V drain-to-source breakdown limit and that thermal management supports the specified power dissipation capabilities.

Part Context

This part belongs to the CPH3455 series of single N-channel power MOSFETs manufactured by onsemi. It is housed in a CPH3 package, also identified as SC-59, SOT-23, or TO-236. The device is constructed using silicon technology and is intended for general-purpose power switching applications where size and efficiency are critical constraints.