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Product Detailed Parameters
- Description：MOSFET N-CH 20V 3.5A 3CPH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：71mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id：1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：2.8 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：260 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-CPH
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The CPH3456-TL-W is a single N-channel enhancement mode Power MOSFET manufactured by onsemi. It features a maximum drain-to-source voltage of 20 V and a continuous drain current rating of 3.5 A. The device utilizes the CPH3 (SOT-23) surface-mount package with three pins. Key electrical characteristics include a typical static drain-to-source on-state resistance of 71 mΩ at VGS=4.5V, and a total gate charge of 2.8 nC at VGS=4.5V. The component supports low-voltage drive applications with a specified threshold voltage range.
Feature Summary
- Supports 1.8V logic-level drive for efficient control in low-power systems
- Optimized low on-resistance to minimize conduction losses
- Low total gate charge for reduced switching energy consumption
Applications
- Battery-powered portable devices
- DC-DC converter circuits
- Load switch applications
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the packing type. The datasheet indicates that the TL-H variant is supplied on reels, while the TL-W designation requires confirmation regarding its specific shipping configuration. Ensure compliance requirements such as lead-free status are validated through the relevant material composition documents provided by the manufacturer.
Selection Notes
Select this component when designing circuits requiring a compact N-channel MOSFET with a 20V breakdown voltage. The low gate charge and fast switching times make it suitable for high-frequency power management tasks. Verify that the thermal dissipation capabilities within the CPH3 package meet the system's power loss requirements under the expected operating conditions.
Part Context
This part belongs to the CPH3456 series of Power MOSFETs from onsemi. It is designed for general-purpose switching applications where small form factor and efficiency are critical. The product line emphasizes low on-resistance and robust performance in space-constrained designs.
Replacement Considerations
Direct substitutes must match the 20V VDS, 3.5A ID, and CPH3/SOT-23 package specifications. Verify pinout compatibility and ensure equivalent RDS(on) and Qg values to maintain circuit performance.
