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Product Detailed Parameters
- Description：MOSFET N-CH 30V 3A 3CPH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：95mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id：1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：3.5 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：265 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-CPH
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The CPH3457-TL-W is a single N-channel enhancement mode MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 3 A. Key electrical characteristics include a maximum on-resistance of 95 mΩ, a gate-source voltage range of ±12 V, and a threshold voltage of 400 mV. The total gate charge is specified at 3.5 nC. Power dissipation capability is rated at 1 W, with an operating temperature range spanning from -55 °C to +150 °C.
Feature Summary
- Designed for low-voltage drive applications with optimized gate threshold characteristics.
- Provides high-speed switching performance through minimized gate charge parameters.
- Engineered for robust thermal operation within extended industrial temperature limits.
Applications
- Low-side switching in portable electronic devices
- Power management circuits in battery-operated systems
- General-purpose load switching in consumer electronics
Procurement Notes
Verify component authenticity through authorized distribution channels due to the discontinued lifecycle status. Confirm package integrity and pin alignment against the SOT-23-3 specification prior to assembly. Ensure storage conditions comply with moisture sensitivity levels to prevent soldering defects during reflow processes.
Selection Notes
Select this component when a compact N-channel solution is required for 30 V logic-level control applications. Evaluate the 95 mΩ on-resistance against thermal constraints to ensure adequate heat dissipation within the 1 W power rating. Consider the small form factor for space-constrained printed circuit board layouts.
Part Context
This part belongs to the CPH series of power MOSFETs from onsemi, which focuses on efficient power switching solutions. The series targets applications requiring reliable performance in minimal footprints. The specific model integrates standard silicon planar technology optimized for cost-effective mass production in consumer and industrial sectors.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative components based on matching pin configurations, voltage ratings, and thermal specifications before implementation.
