CPH3462-TL-W

$0.39

Description：MOSFET N-CH 100V 1A 3CPH
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f58f37154b97 Category: Single FETs, MOSFETs Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 1A 3CPH
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：785mOhm @ 1A, 10V
Vgs(th) (Max) @ Id：2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：3.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：155 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：3-CPH
Package / Case：TO-236-3, SC-59, SOT-23-3

Download product information

CPH3462-TL-W

Overview

The onsemi CPH3462-TL-W is a single N-channel enhancement mode MOSFET housed in an SOT-23-3 surface-mount package. It features a drain-source breakdown voltage of 100 V and supports a continuous drain current of 1 A. The device exhibits a maximum on-resistance of 785 mOhms at room temperature, with a gate threshold voltage ranging from 1.2 V to 2.6 V. Key switching parameters include a gate charge of 3.4 nC, a rise time of 2.8 ns, and a fall time of 11 ns. It operates within a junction temperature range of -55°C to +150°C and has a power dissipation rating of 1 W.

Feature Summary

N-channel enhancement mode configuration for standard switching applications
High voltage capability with 100 V drain-source breakdown rating
Low gate charge design facilitating efficient drive requirements
Robust thermal performance supporting operation up to 150°C

Applications

General-purpose low-side switching circuits
Power management modules requiring high-voltage isolation
Battery protection systems
DC-DC converter output stages

Procurement Notes

Verify component authenticity through authorized distribution channels due to the discontinued status. Confirm RoHS and REACH compliance documentation matches specific manufacturing lot codes. Validate that the SOT-23-3 footprint aligns with existing PCB designs, as lead dimensions may vary slightly between production eras. Ensure storage conditions prevent moisture sensitivity issues prior to reflow soldering.

Selection Notes

Select this component when a 100 V N-channel MOSFET is required in a compact SOT-23-3 package. Consider the 785 mOhm on-resistance for efficiency calculations under 1 A load conditions. Evaluate the 3.4 nC gate charge against available driver capabilities to ensure adequate switching speeds. Compare thermal resistance values against system heat dissipation constraints to maintain junction temperatures within safe operating limits.

Part Context

This part belongs to the CPH3 series of small-signal MOSFETs designed for surface-mount assembly. The series emphasizes compact packaging combined with reliable silicon technology. The CPH3462 variant specifically targets applications needing higher voltage ratings than standard logic-level devices while maintaining low profile dimensions suitable for dense board layouts.