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The onsemi CPH5517-TL-E is a complementary dual bipolar transistor in a CPH5 surface-mount package. It integrates a PNP and an NPN transistor with shared common base terminal (Pin 4). Key electrical parameters include a collector-to-emitter voltage of ±50 V, continuous collector current of ±1 A, and pulse collector current up to ±3 A. The device features a low collector-to-emitter saturation voltage, typically -280 mV for the PNP and 130 mV for the NPN at specified currents. Gain-bandwidth product reaches 420 MHz, while DC current gain ranges from 200 to 560. Maximum power dissipation is rated at 0.9 W on a ceramic board, with an operating junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix TL-E against official documentation to confirm lead-free status and reel packaging quantity of 3,000 pieces. Ensure compatibility with SC-74A/SOT-25 land patterns during PCB layout. Confirm thermal management requirements align with the 0.9 W dissipation rating on standard ceramic boards.
Select this component when space constraints require a compact complementary pair with a shared base connection. The CPH5517 serves as a direct replacement for combinations of separate CPH3116 and CPH3216 devices. Evaluate switching speed and saturation voltage requirements against the provided electrical characteristics curves for optimal circuit performance.
The CPH5517 belongs to the CPH series of composite transistors manufactured by onsemi. It utilizes the CPH5 package, which corresponds to JEITA/JEDEC standards SC-74A or SOT-25. This series is designed for applications requiring multiple transistors in minimal footprint, offering improved mounting efficiency compared to discrete components.
The datasheet specifies that the internal chips are equivalent to the CPH3116 and CPH3216 respectively.