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The CPH5518-TL-E is a complementary dual bipolar junction transistor (BJT) from onsemi, integrating a PNP and an NPN transistor within a single CPH5 surface-mount package. It supports a maximum collector current of 1 A and withstands collector-to-emitter voltages up to 50 V. The device features a low saturation voltage, typically 90 mV at 300 mA, and a gain-bandwidth product of 420 MHz. Total power dissipation reaches 1.2 W when mounted on a ceramic substrate. The component operates with a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official documentation before procurement. The TL-E suffix indicates lead-free packaging with a minimum packing quantity of 3,000 pieces per reel. Confirm that the required shipping memo matches the intended manufacturing process. Ensure compliance with RoHS directives as specified in the datasheet.
Select this component for applications requiring complementary switching in a compact footprint. Verify thermal management requirements, as total power dissipation depends on mounting on a ceramic substrate. Check that the operating voltage does not exceed the 50 V collector-to-emitter rating. Ensure base drive currents remain within the 200 mA limit.
This part belongs to the CPH5 series of complementary dual transistors manufactured by onsemi. It utilizes the CPH5 package, which is equivalent to JEITA/JEDEC standards SC-74A and SOT-25. The device integrates two chips encapsulated together, offering an alternative to discrete component solutions.
The datasheet notes equivalence to the CPH3116 and CPH3216 components within the same package configuration.