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The CPH5614-TL-E is an N-channel silicon MOSFET manufactured by Sanyo, now part of onsemi. It is housed in a bulk standard package and classified as a MOSFET array. The component operates with a maximum drain-source breakdown voltage (Vds) of 30 V and supports a continuous drain current (Id) of 150 mA. Its on-resistance (Rds(on)) is specified at 3.7 Ohms. This device utilizes enhancement mode operation and is designed for surface-mount applications.
Verify the manufacturer lineage carefully, as this component originates from Sanyo and is distributed under the onsemi brand. Confirm the specific package type and life cycle status, as some sources indicate it may be obsolete or discontinued. Ensure compatibility with your ECAD tools using available models before finalizing procurement plans.
Select this component when a dual N-channel MOSFET array is required for low-current applications. The 30 V rating and 150 mA current limit define its operational boundaries. Consider the 3.7 Ohm on-resistance for power dissipation calculations. Verify availability through authorized distributors handling the onsemi portfolio.
This part belongs to the CPH5 series of small-signal MOSFETs originally developed by Sanyo. The series includes various configurations such as single and dual arrays. The CPH5614 specifically denotes a dual N-channel variant. Distribution has transitioned to onsemi following corporate acquisitions, affecting documentation and support channels.
The maximum drain-source breakdown voltage (Vds) is 30 V.
It is a dual N-channel MOSFET configured within a single package.